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Fabrication of transparent ITO/GTO bilayer diode thin films

Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bila...

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Main Authors: Sutan Chairul, Imran, Echimoto, Atsushi, Tazawa, Ryutaro, Murai, Kei-ichiro, Moriga, Toshihiro
Format: Article
Language:English
Published: World Scientific Publishing Co Pte Ltd 2023
Online Access:http://eprints.utem.edu.my/id/eprint/27208/2/0170016062023227.PDF
http://eprints.utem.edu.my/id/eprint/27208/
https://worldscientific.com/doi/10.1142/S0217984923400390
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spelling my.utem.eprints.272082024-07-04T09:37:44Z http://eprints.utem.edu.my/id/eprint/27208/ Fabrication of transparent ITO/GTO bilayer diode thin films Sutan Chairul, Imran Echimoto, Atsushi Tazawa, Ryutaro Murai, Kei-ichiro Moriga, Toshihiro Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bilayer film exhibited rectification characteristics of approximately 0 and 3.8 µA/V when negative and positive voltages were applied, respectively. However, the rectification characteristics increased up to 68.3 µA/V in the positive voltage applied region after annealed at 200◦C. World Scientific Publishing Co Pte Ltd 2023 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/27208/2/0170016062023227.PDF Sutan Chairul, Imran and Echimoto, Atsushi and Tazawa, Ryutaro and Murai, Kei-ichiro and Moriga, Toshihiro (2023) Fabrication of transparent ITO/GTO bilayer diode thin films. Modern Physics Letters B, 37 (19). pp. 1-5. ISSN 0217-9849 https://worldscientific.com/doi/10.1142/S0217984923400390
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
description Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bilayer film exhibited rectification characteristics of approximately 0 and 3.8 µA/V when negative and positive voltages were applied, respectively. However, the rectification characteristics increased up to 68.3 µA/V in the positive voltage applied region after annealed at 200◦C.
format Article
author Sutan Chairul, Imran
Echimoto, Atsushi
Tazawa, Ryutaro
Murai, Kei-ichiro
Moriga, Toshihiro
spellingShingle Sutan Chairul, Imran
Echimoto, Atsushi
Tazawa, Ryutaro
Murai, Kei-ichiro
Moriga, Toshihiro
Fabrication of transparent ITO/GTO bilayer diode thin films
author_facet Sutan Chairul, Imran
Echimoto, Atsushi
Tazawa, Ryutaro
Murai, Kei-ichiro
Moriga, Toshihiro
author_sort Sutan Chairul, Imran
title Fabrication of transparent ITO/GTO bilayer diode thin films
title_short Fabrication of transparent ITO/GTO bilayer diode thin films
title_full Fabrication of transparent ITO/GTO bilayer diode thin films
title_fullStr Fabrication of transparent ITO/GTO bilayer diode thin films
title_full_unstemmed Fabrication of transparent ITO/GTO bilayer diode thin films
title_sort fabrication of transparent ito/gto bilayer diode thin films
publisher World Scientific Publishing Co Pte Ltd
publishDate 2023
url http://eprints.utem.edu.my/id/eprint/27208/2/0170016062023227.PDF
http://eprints.utem.edu.my/id/eprint/27208/
https://worldscientific.com/doi/10.1142/S0217984923400390
_version_ 1804070303771394048
score 13.209306

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