Fabrication of transparent ITO/GTO bilayer diode thin films
Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bila...
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World Scientific Publishing Co Pte Ltd
2023
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my.utem.eprints.272082024-07-04T09:37:44Z http://eprints.utem.edu.my/id/eprint/27208/ Fabrication of transparent ITO/GTO bilayer diode thin films Sutan Chairul, Imran Echimoto, Atsushi Tazawa, Ryutaro Murai, Kei-ichiro Moriga, Toshihiro Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bilayer film exhibited rectification characteristics of approximately 0 and 3.8 µA/V when negative and positive voltages were applied, respectively. However, the rectification characteristics increased up to 68.3 µA/V in the positive voltage applied region after annealed at 200◦C. World Scientific Publishing Co Pte Ltd 2023 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/27208/2/0170016062023227.PDF Sutan Chairul, Imran and Echimoto, Atsushi and Tazawa, Ryutaro and Murai, Kei-ichiro and Moriga, Toshihiro (2023) Fabrication of transparent ITO/GTO bilayer diode thin films. Modern Physics Letters B, 37 (19). pp. 1-5. ISSN 0217-9849 https://worldscientific.com/doi/10.1142/S0217984923400390 |
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Transparent diodes were fabricated by layering a Ga–Sn–O (GTO) film onto an In2O3:Sn (ITO) film using a facing-targeted DC sputtering method. When a GTO film containing∼25 mol% Ga was deposited on the surface of the conductive ITO film at room temperature, a diode bilayer film was obtained. The bilayer film exhibited rectification characteristics of approximately 0 and 3.8 µA/V when negative and positive voltages were applied, respectively. However, the rectification characteristics increased up to 68.3 µA/V in the positive voltage applied region after annealed at 200◦C. |
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Article |
author |
Sutan Chairul, Imran Echimoto, Atsushi Tazawa, Ryutaro Murai, Kei-ichiro Moriga, Toshihiro |
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Sutan Chairul, Imran Echimoto, Atsushi Tazawa, Ryutaro Murai, Kei-ichiro Moriga, Toshihiro Fabrication of transparent ITO/GTO bilayer diode thin films |
author_facet |
Sutan Chairul, Imran Echimoto, Atsushi Tazawa, Ryutaro Murai, Kei-ichiro Moriga, Toshihiro |
author_sort |
Sutan Chairul, Imran |
title |
Fabrication of transparent ITO/GTO bilayer diode thin films |
title_short |
Fabrication of transparent ITO/GTO bilayer diode thin films |
title_full |
Fabrication of transparent ITO/GTO bilayer diode thin films |
title_fullStr |
Fabrication of transparent ITO/GTO bilayer diode thin films |
title_full_unstemmed |
Fabrication of transparent ITO/GTO bilayer diode thin films |
title_sort |
fabrication of transparent ito/gto bilayer diode thin films |
publisher |
World Scientific Publishing Co Pte Ltd |
publishDate |
2023 |
url |
http://eprints.utem.edu.my/id/eprint/27208/2/0170016062023227.PDF http://eprints.utem.edu.my/id/eprint/27208/ https://worldscientific.com/doi/10.1142/S0217984923400390 |
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