Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps
A Binary reticle for lithography circuit patterning is extremerly senstive to electrostatic field. Damaged is seen on its feature after a breakdown voltage occurred between the metal lines. The experimental quantification of ESD for Binary reticle is performed by direct discharge to the feature of C...
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my.utem.eprints.262152023-03-02T12:08:50Z http://eprints.utem.edu.my/id/eprint/26215/ Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps Razman, Harriman Awang Md Isa, Azmi Suaidi, Mohamad Kadim A Binary reticle for lithography circuit patterning is extremerly senstive to electrostatic field. Damaged is seen on its feature after a breakdown voltage occurred between the metal lines. The experimental quantification of ESD for Binary reticle is performed by direct discharge to the feature of Critical Dimension (CD) of 80 nm to 160 nm. Its breakdown voltage correlated to CD but lower than international standard recommendations and observed Electric Field-Induced Migration (EFM) damaged at CD of < 110 nm but ESD for CD > 110 nm to 160 nm. Wydawnictwo SIGMA-NOT 2022 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/26215/2/ARTICLE%20PUBLISHED%20EXPERIMENTAL%20QUANTIFICATION%20OF%20ESD%20IN%20BINARY%20RETICLE.PDF Razman, Harriman and Awang Md Isa, Azmi and Suaidi, Mohamad Kadim (2022) Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps. Przeglad Elektrotechniczny, 98 (3). 60 - 63. ISSN 0033-2097 http://pe.org.pl/articles/2022/3/14.pdf 10.15199/48.2022.03.14 |
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A Binary reticle for lithography circuit patterning is extremerly senstive to electrostatic field. Damaged is seen on its feature after a breakdown voltage occurred between the metal lines. The experimental quantification of ESD for Binary reticle is performed by direct discharge to the feature of Critical Dimension (CD) of 80 nm to 160 nm. Its breakdown voltage correlated to CD but lower than international standard recommendations and observed Electric Field-Induced Migration (EFM) damaged at CD of < 110 nm but ESD for CD > 110 nm to 160 nm. |
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Article |
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Razman, Harriman Awang Md Isa, Azmi Suaidi, Mohamad Kadim |
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Razman, Harriman Awang Md Isa, Azmi Suaidi, Mohamad Kadim Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps |
author_facet |
Razman, Harriman Awang Md Isa, Azmi Suaidi, Mohamad Kadim |
author_sort |
Razman, Harriman |
title |
Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps |
title_short |
Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps |
title_full |
Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps |
title_fullStr |
Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps |
title_full_unstemmed |
Experimental quantification of electrostatic damage (ESD) in binary reticle with feature of nanometre scale gaps |
title_sort |
experimental quantification of electrostatic damage (esd) in binary reticle with feature of nanometre scale gaps |
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Wydawnictwo SIGMA-NOT |
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2022 |
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http://eprints.utem.edu.my/id/eprint/26215/2/ARTICLE%20PUBLISHED%20EXPERIMENTAL%20QUANTIFICATION%20OF%20ESD%20IN%20BINARY%20RETICLE.PDF http://eprints.utem.edu.my/id/eprint/26215/ http://pe.org.pl/articles/2022/3/14.pdf |
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