A reliable PUF in a dual function SRAM

The Internet of Things (IoTs) employs resource-constrained sensor nodes for sensing and processing data that require robust, lightweight cryptographic primitives. The SRAM Physical Unclonable Function (SRAM-PUF) is a potential candidate for secure key generation. An SRAM-PUF is able to generate rand...

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Main Authors: Zwolinski, Mark, Mispan, Mohd Syafiq, Duan, Shengyu, Halak, Basel
Format: Article
Language:English
Published: Elsevier B.V. 2019
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Online Access:http://eprints.utem.edu.my/id/eprint/24066/2/2019_A%20reliable%20PUF%20in%20a%20dual%20function%20SRAM.pdf
http://eprints.utem.edu.my/id/eprint/24066/
https://www.sciencedirect.com/science/article/pii/S0167926018304747?via%3Dihub
https://doi.org/10.1016/j.vlsi.2019.06.001
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spelling my.utem.eprints.240662023-08-17T16:16:40Z http://eprints.utem.edu.my/id/eprint/24066/ A reliable PUF in a dual function SRAM Zwolinski, Mark Mispan, Mohd Syafiq Duan, Shengyu Halak, Basel T Technology (General) TK Electrical engineering. Electronics Nuclear engineering The Internet of Things (IoTs) employs resource-constrained sensor nodes for sensing and processing data that require robust, lightweight cryptographic primitives. The SRAM Physical Unclonable Function (SRAM-PUF) is a potential candidate for secure key generation. An SRAM-PUF is able to generate random and unique cryptographic keys based on start-up values by exploiting intrinsic manufacturing process variations. The reuse of the available on-chip SRAM memory in a system as a PUF might achieve useful cost efficiency. However, as CMOS technology scales down, aging-induced Negative Bias Temperature Instability (NBTI) becomes more pronounced resulting in asymmetric degradation of memory bit cells after prolonged storage of the same bit values. This causes unreliable start-up values for an SRAM-PUF. In this paper, the on-chip memory in the ARM architecture has been used as a case study to investigate reliability in an SRAM-PUF. We show that the bit probability in a 32-bit ARM instruction cache has a predictable pattern and hence predictable aging. Therefore, we propose using an instruction cache as a PUF to save silicon area. Furthermore, we propose a bit selection technique to mitigate the NBTI effect. We show that this technique can reduce the predicted bit error in an SRAM-PUF from 14.18% to 5.58% over 5 years. Consequently, as the bit error reduces, the area overhead of the error-correction circuitry is about 6 × smaller compared to that without a bit selection technique. Elsevier B.V. 2019-09 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/24066/2/2019_A%20reliable%20PUF%20in%20a%20dual%20function%20SRAM.pdf Zwolinski, Mark and Mispan, Mohd Syafiq and Duan, Shengyu and Halak, Basel (2019) A reliable PUF in a dual function SRAM. Integration, 68. pp. 12-21. ISSN 0167-9260 https://www.sciencedirect.com/science/article/pii/S0167926018304747?via%3Dihub https://doi.org/10.1016/j.vlsi.2019.06.001
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
topic T Technology (General)
TK Electrical engineering. Electronics Nuclear engineering
spellingShingle T Technology (General)
TK Electrical engineering. Electronics Nuclear engineering
Zwolinski, Mark
Mispan, Mohd Syafiq
Duan, Shengyu
Halak, Basel
A reliable PUF in a dual function SRAM
description The Internet of Things (IoTs) employs resource-constrained sensor nodes for sensing and processing data that require robust, lightweight cryptographic primitives. The SRAM Physical Unclonable Function (SRAM-PUF) is a potential candidate for secure key generation. An SRAM-PUF is able to generate random and unique cryptographic keys based on start-up values by exploiting intrinsic manufacturing process variations. The reuse of the available on-chip SRAM memory in a system as a PUF might achieve useful cost efficiency. However, as CMOS technology scales down, aging-induced Negative Bias Temperature Instability (NBTI) becomes more pronounced resulting in asymmetric degradation of memory bit cells after prolonged storage of the same bit values. This causes unreliable start-up values for an SRAM-PUF. In this paper, the on-chip memory in the ARM architecture has been used as a case study to investigate reliability in an SRAM-PUF. We show that the bit probability in a 32-bit ARM instruction cache has a predictable pattern and hence predictable aging. Therefore, we propose using an instruction cache as a PUF to save silicon area. Furthermore, we propose a bit selection technique to mitigate the NBTI effect. We show that this technique can reduce the predicted bit error in an SRAM-PUF from 14.18% to 5.58% over 5 years. Consequently, as the bit error reduces, the area overhead of the error-correction circuitry is about 6 × smaller compared to that without a bit selection technique.
format Article
author Zwolinski, Mark
Mispan, Mohd Syafiq
Duan, Shengyu
Halak, Basel
author_facet Zwolinski, Mark
Mispan, Mohd Syafiq
Duan, Shengyu
Halak, Basel
author_sort Zwolinski, Mark
title A reliable PUF in a dual function SRAM
title_short A reliable PUF in a dual function SRAM
title_full A reliable PUF in a dual function SRAM
title_fullStr A reliable PUF in a dual function SRAM
title_full_unstemmed A reliable PUF in a dual function SRAM
title_sort reliable puf in a dual function sram
publisher Elsevier B.V.
publishDate 2019
url http://eprints.utem.edu.my/id/eprint/24066/2/2019_A%20reliable%20PUF%20in%20a%20dual%20function%20SRAM.pdf
http://eprints.utem.edu.my/id/eprint/24066/
https://www.sciencedirect.com/science/article/pii/S0167926018304747?via%3Dihub
https://doi.org/10.1016/j.vlsi.2019.06.001
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score 13.209306