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Application Of Taguchi Method With The Interaction Test For Lower DIBL IN WSix/TiO2 Channel Vertical Double Gate NMOS

The poly-Si/SiO2 based MOSFETs have been encountering a problem with the limitation of channel length for the device miniaturization. The drain induced barrier lowering (DIBL) effect is the main threat for the device to acquire excellent device’s characteristics. Thus, the metal-gate/high-k techno...

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Bibliographic Details
Main Authors: Khairil Ezwan, Kaharudin, Fauziyah, Salehuddin, Anis Suhaila, Mohd Zain, Muhammad Nazirul Ifwat, Abd Aziz, I., Ahmad
Format: Article
Language:English
Published: Asian Research Publishing Network (ARPN) 2016
Subjects:
T Technology (General)
Online Access:http://eprints.utem.edu.my/id/eprint/17097/1/Application%20Of%20Taguchi%20Method%20With%20The%20Interaction%20Test%20For%20Lower%20DIBL%20IN%20WSix%20TiO2%20Channel%20Vertical%20Double%20Gate%20NMOS.pdf
http://eprints.utem.edu.my/id/eprint/17097/
http://www.arpnjournals.org/jeas/research_papers/rp_2016/jeas_0616_4395.pdf
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http://eprints.utem.edu.my/id/eprint/17097/1/Application%20Of%20Taguchi%20Method%20With%20The%20Interaction%20Test%20For%20Lower%20DIBL%20IN%20WSix%20TiO2%20Channel%20Vertical%20Double%20Gate%20NMOS.pdf
http://eprints.utem.edu.my/id/eprint/17097/
http://www.arpnjournals.org/jeas/research_papers/rp_2016/jeas_0616_4395.pdf

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