Universal Mobility-Field Curves For Electrons In Polysilicon Inversion Layer
This paper reports the studies on the inversion-layer mobility in n-channel Poly-Si TFT’s with 1016cm-3 substrate impurity concentration. The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (Eeff) was examined.
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IJENS
2013
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/12543/1/1312703-1305-9494-IJECS-IJENS.pdf http://eprints.utem.edu.my/id/eprint/12543/ |
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