The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures

• Main Authors: Yusof, Ahmad Sauffi, Hassan, Zainuriah, Hamady, Sidi, Sha, Shiong Ng, Ahmad, Mohd Anas, Way, Foong Lim, Fressengeas, Nicolas, Chevallier, Christyves
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/48969/1/MNRG_ZH09.pdf; http://eprints.usm.my/48969/

This work presents the effect of growth temperature on the evolution of indium incorporation and growth process of InGaN/GaN heterostructures grown using Taiyo Nippon Sanso Corporation (TNSC) metal organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.8 μm and 40 nm thick undoped-GaN (ud-GaN) and GaN nucleation layer respectively over a commercial 2” c-plane flat sapphire substrate (FSS). The InGaN layers were grown at different temperature setting ranging from 860°C to 820°C in a step of 20°C. The details structural, surface morphology and optical properties were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrophotometer respectively.