Potential of polycrystalline GaN deposited by electron beam evaporator for metal-semiconductor-metal {MSM) photodetector device
Polycrystalline GaN has the potential in photodetector application for a wide range of ultraviolet (UV) light. Nonetheless, devices based on this material have not received much attention as compared to its single crystal counterpart. Therefore, this work describes one of the pioneering works on MSM...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48817/1/NZ17_OP01.pdf%20done.pdf http://eprints.usm.my/48817/ |
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