Influence of Annealing Temperature on InN Thin Films Grown by RF Magnetron Sputtering
This paper presents the study and characterization of indium nitride (InN) films grown on quartz glass and p-Si (111) substrates by RF magnetron sputtering method using pure indium target in argon (Ar) and nitrogen (N 2) environment. The characterization was carried out by high resolution X-ray di...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48795/1/ZO3.pdf%20done.pdf http://eprints.usm.my/48795/ |
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| Summary: | This paper presents the study and characterization of indium nitride (InN) films grown on quartz glass
and p-Si (111) substrates by RF magnetron sputtering method using pure indium target in argon (Ar) and
nitrogen (N 2) environment. The characterization was carried out by high resolution X-ray diffraction
(HRXRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and
energy dispersive X-ray spectroscopy (EDX). XRD results show the growth of polycrystalline wurtzite
films with varying peak intensities. The deposited films were annealed in nitrogen environment at
different temperatures ranging from 1 00°C to 400°C. The annealing was carried out for four hours and
the results were compared with pre-annealing samples. |
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