Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method

• Main Authors: Hui, San Lee, Sha, Shiong Ng, Fong, Kwong Yam
• Format: Conference or Workshop Item
• Language: English
• Published: 2016
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/48776/1/NG2.pdf%20done.pdf; http://eprints.usm.my/48776/

In this study, doped indium nitride (InN:Mg) thin films grown on silicon ( Ill) substrate are prepared via so l-gel spin coating method followed by nitridation process. The degree of nitrid at ion of ln 20 3 to InN was very sensitive to the nitridat ion temperature. A custo-made tube furnace was used to do nitridation process which can resolve the low dissociation temperature issue of lnN:Mg. In this research, attention was focused on the influences of nitridation temperatures on the structural of the synthesized lnN:Mg thin films. The films were nitridated at range 580-620 °C for 45 min and the growth of lnN:Mg thin films were investigated. X-ray diffraction (XRD) results revealed that the deposited lnN:Mg thin film at 600°C has InN( I 00), lnN(002) and InN( I 0 I) preferred orientation. Field emission scanning electron microscopy (FESEM) showed th e surface of the films exhibited densely packed grains. Lastly, the elemental composition the deposited thin films was analysed by using energy dispersive Xrays spectroscopy (EDX). The detected atomic percentages at nitridation temperature 600°C revealed the lowest oxygen percentage with almost ratio. indium to nitrogen. Moreover. the atom ic percentage of oxygen increases with increasing nitridation temperatue. Finally, all the results revealed that 600°C of nitridation temperature was the most efficient temperature for the nitridation process. All the measurements were performed at room temperature.