Material Design Of Iii-Nitride Ternary Via First Principles Calculations
III-nitride semiconductors exhibit an array of exceptional features, including broad coverage of spectral frequencies range and reasonable wear resistance, making them desirable materials in a variety of engineering applications. Due to these capabilities, extensive researching works have been carri...
Saved in:
Main Author: | Chang, Robin Yee Hui |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2017
|
Subjects: | |
Online Access: | http://eprints.usm.my/48066/1/MATERIAL%20DESIGN%20OF%20III-NITRIDE%20TERNARY.pdf%20cut.pdf http://eprints.usm.my/48066/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Infrared Dielectric Characteristics Of Porous Binary And Ternary Iii-Nitrides Heterostructures
by: Yew, Pauline
Published: (2018) -
First principles study of scandium nitride and yttrium nitride alloy system: prospective material for optoelectronics
by: Ul Haq, Bakhtiar, et al.
Published: (2015) -
First-principles calculations of antimony sulphide Sb2S3
by: Radzwan, Afiq, et al.
Published: (2017) -
Synthesis of gamma and theta alumina phases complemented with first principles calculation
by: Jbara, Ahmed Subhi
Published: (2017) -
First-principles calculations of the stibnite at the level of modified Becke-Johnson exchange potential
by: Radzwan, Afiq, et al.
Published: (2018)