Cover Image

Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application

In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of I...

Full description

Saved in:
Bibliographic Details
Main Author: Afzal, Naveed
Format: Thesis
Language:English
Published: 2017
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf
http://eprints.usm.my/45432/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.usm.eprints.45432
record_format eprints
spelling my.usm.eprints.45432 http://eprints.usm.my/45432/ Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application Afzal, Naveed QC1-999 Physics In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of InAlN were investigated through X-ray diffraction (XRD) analysis, surface properties were studied through field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) whereas the electrical properties were examined by taking Hall measurements and current-voltage (I-V) characteristics of the films. The band gap of InAlN was estimated through UV-Vis reflectance spectroscopy. 2017-02 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf Afzal, Naveed (2017) Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application. PhD thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Afzal, Naveed
Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
description In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of InAlN were investigated through X-ray diffraction (XRD) analysis, surface properties were studied through field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) whereas the electrical properties were examined by taking Hall measurements and current-voltage (I-V) characteristics of the films. The band gap of InAlN was estimated through UV-Vis reflectance spectroscopy.
format Thesis
author Afzal, Naveed
author_facet Afzal, Naveed
author_sort Afzal, Naveed
title Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_short Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_full Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_fullStr Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_full_unstemmed Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_sort fabrication and characterizations of magnetron co-sputtered inain films for photodetectors application
publishDate 2017
url http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf
http://eprints.usm.my/45432/
_version_ 1646011350950871040
score 13.188404

Similar Items