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Development of silicon planar P-I-N photodiode

Optical receivers are used to detect optical power and to extract the information that is being transmitted. The incident optical power is detected by a photo detector, usually a PIN or avalanche photodiode (APD). A PIN or APD is an amplitude modulation envelope photo detector, insensitive to phase...

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Main Authors: N V Visvanathan, P Susthitha Menon, Shaari, Sahbudin
Other Authors: Ahmad, Abdul Latif
Format: Book Section
Language:English
Published: Penerbit Universiti Sains Malaysia 2004
Subjects:
Q179.9-180 Research
Online Access:http://eprints.usm.my/43402/1/pME08.pdf
http://eprints.usm.my/43402/
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spelling my.usm.eprints.43402 http://eprints.usm.my/43402/ Development of silicon planar P-I-N photodiode N V Visvanathan, P Susthitha Menon Shaari, Sahbudin Q179.9-180 Research Optical receivers are used to detect optical power and to extract the information that is being transmitted. The incident optical power is detected by a photo detector, usually a PIN or avalanche photodiode (APD). A PIN or APD is an amplitude modulation envelope photo detector, insensitive to phase or small changes in wavelength. It generates an electrical output that reproduces the envelope of the received optical signal (Li, 2000). The most widely deployed photodiode for all lightwave applications is the PIN photodiode where its performance and characteristics are well understood and documented (Campbell, 1995). Penerbit Universiti Sains Malaysia Ahmad, Abdul Latif Yahya, Ahmad Rahim Mohd. Abdullah, Amirul AI-Ashraf Muhammad, Tengku Sifzizul Tengku 2004 Book Section PeerReviewed application/pdf en http://eprints.usm.my/43402/1/pME08.pdf N V Visvanathan, P Susthitha Menon and Shaari, Sahbudin (2004) Development of silicon planar P-I-N photodiode. In: The 4th Annual Seminar of National Science Fellowship NSF 2004 Proceedings. Penerbit Universiti Sains Malaysia, Pulau Pinang, Malaysia, pp. 466-471.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic Q179.9-180 Research
spellingShingle Q179.9-180 Research
N V Visvanathan, P Susthitha Menon
Shaari, Sahbudin
Development of silicon planar P-I-N photodiode
description Optical receivers are used to detect optical power and to extract the information that is being transmitted. The incident optical power is detected by a photo detector, usually a PIN or avalanche photodiode (APD). A PIN or APD is an amplitude modulation envelope photo detector, insensitive to phase or small changes in wavelength. It generates an electrical output that reproduces the envelope of the received optical signal (Li, 2000). The most widely deployed photodiode for all lightwave applications is the PIN photodiode where its performance and characteristics are well understood and documented (Campbell, 1995).
author2 Ahmad, Abdul Latif
author_facet Ahmad, Abdul Latif
N V Visvanathan, P Susthitha Menon
Shaari, Sahbudin
format Book Section
author N V Visvanathan, P Susthitha Menon
Shaari, Sahbudin
author_sort N V Visvanathan, P Susthitha Menon
title Development of silicon planar P-I-N photodiode
title_short Development of silicon planar P-I-N photodiode
title_full Development of silicon planar P-I-N photodiode
title_fullStr Development of silicon planar P-I-N photodiode
title_full_unstemmed Development of silicon planar P-I-N photodiode
title_sort development of silicon planar p-i-n photodiode
publisher Penerbit Universiti Sains Malaysia
publishDate 2004
url http://eprints.usm.my/43402/1/pME08.pdf
http://eprints.usm.my/43402/
_version_ 1643710733821673472
score 13.211869

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