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Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon

Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS w...

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Main Author: Yaakob, Suriani Haji
Format: Thesis
Language:English
Published: 2011
Subjects:
QD1-999 Chemistry
Online Access:http://eprints.usm.my/42764/1/SURIANI_HAJI_YAAKOB.pdf
http://eprints.usm.my/42764/
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spelling my.usm.eprints.42764 http://eprints.usm.my/42764/ Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon Yaakob, Suriani Haji QD1-999 Chemistry Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS were studied. These properties were characterized by Scanning Electron Microscopy (SEM), gravimetric method, Atomic Force Microscopy (AFM) and Current-Voltage (I-V) characteristics. The increment in current density has changed the morphology of the PS from interconnected network to columnar with side branching. However, with the increase in the etching time and HF concentration, this disappeared to give smooth side wall pores. 2011-07 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/42764/1/SURIANI_HAJI_YAAKOB.pdf Yaakob, Suriani Haji (2011) Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QD1-999 Chemistry
spellingShingle QD1-999 Chemistry
Yaakob, Suriani Haji
Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon
description Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS were studied. These properties were characterized by Scanning Electron Microscopy (SEM), gravimetric method, Atomic Force Microscopy (AFM) and Current-Voltage (I-V) characteristics. The increment in current density has changed the morphology of the PS from interconnected network to columnar with side branching. However, with the increase in the etching time and HF concentration, this disappeared to give smooth side wall pores.
format Thesis
author Yaakob, Suriani Haji
author_facet Yaakob, Suriani Haji
author_sort Yaakob, Suriani Haji
title Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon
title_short Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon
title_full Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon
title_fullStr Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon
title_full_unstemmed Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon
title_sort effects of current density, etching time and hydrofluoric acid concentration on the formation and morphology of highly doped n-type porous silicon
publishDate 2011
url http://eprints.usm.my/42764/1/SURIANI_HAJI_YAAKOB.pdf
http://eprints.usm.my/42764/
_version_ 1643710570307780608
score 13.160551

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