Study of structural and optical properties of nanostructured wide band gap ternary alloy semiconductor.
Semiconductor technology has continuously progressed from the use of elemental semiconductors such as silicon and germanium to the use of binary, ternary and higher order alloys, particularly of II I-V and II-VI compounds. The interest in these semiconductor alloys stems from the desire to control t...
Saved in:
Main Author: | Hassan, Zainuriah |
---|---|
Format: | Monograph |
Published: |
Universiti Sains Malaysia
2015
|
Subjects: | |
Online Access: | http://eprints.usm.my/32798/ |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Preparation and characterization of Nanostructured Porous Ternary and Quaternary Ill-Nitrides Alloys.
by: Hassan, Zainuriah
Published: (2016) -
Studies on Transition Metal Impregnated Mx(lnGa)1_XN modulated structures for wide band gap multi-junction Solar cells.
by: Devarajan, Mutharasu
Published: (2013) -
First-principles computations of YxGa1−x
As-ternary alloys: a study on structural, electronic, optical and elastic properties
by: Touam, S., et al.
Published: (2020) -
High gain s-band semiconductors optical amplifier with double-pass configuration
by: Ahmad, Harith, et al.
Published: (2011) -
Doping effect numerical comparison of band gap energy and active
region range for GaN and GaAs based semiconductor
by: Faris Azim Ahmad Fajri, Faris Azim, et al.
Published: (2021)