Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic app...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2018
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf http://eprints.usm.my/44275/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|