Inductively Coupled Plasma Etching On Gan

Dalam projek ini, penyelidikan difokuskan kepada kajian tentang pengaruh pelbagai campuran plasma (H2 dan Ar) kepada Ch sebagai gas asas pada GaN menggunakan punaran kering khususnya punaran plasma yang digandingkan secara teraruh (ICP) untuk mendapatkan anisotropik yang tinggi In this project...

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Main Author: Rosli, Siti Azlina
Format: Thesis
Language:English
Published: 2010
Subjects:
Online Access:http://eprints.usm.my/29516/1/Inductively_coupled_plasma_etching_on_GaN.pdf
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spelling my.usm.eprints.29516 http://eprints.usm.my/29516/ Inductively Coupled Plasma Etching On Gan Rosli, Siti Azlina QC1 Physics (General) Dalam projek ini, penyelidikan difokuskan kepada kajian tentang pengaruh pelbagai campuran plasma (H2 dan Ar) kepada Ch sebagai gas asas pada GaN menggunakan punaran kering khususnya punaran plasma yang digandingkan secara teraruh (ICP) untuk mendapatkan anisotropik yang tinggi In this project, the research mainly focused on the investigation of the influence of the various plasma mixtures (H2 and Ar) in Ch-based on GaN using dry etching majoring in Inductively Coupled Plasma etching to obtain highly anisotropic 2010-01 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29516/1/Inductively_coupled_plasma_etching_on_GaN.pdf Rosli, Siti Azlina (2010) Inductively Coupled Plasma Etching On Gan. Masters thesis, USM.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Rosli, Siti Azlina
Inductively Coupled Plasma Etching On Gan
description Dalam projek ini, penyelidikan difokuskan kepada kajian tentang pengaruh pelbagai campuran plasma (H2 dan Ar) kepada Ch sebagai gas asas pada GaN menggunakan punaran kering khususnya punaran plasma yang digandingkan secara teraruh (ICP) untuk mendapatkan anisotropik yang tinggi In this project, the research mainly focused on the investigation of the influence of the various plasma mixtures (H2 and Ar) in Ch-based on GaN using dry etching majoring in Inductively Coupled Plasma etching to obtain highly anisotropic
format Thesis
author Rosli, Siti Azlina
author_facet Rosli, Siti Azlina
author_sort Rosli, Siti Azlina
title Inductively Coupled Plasma Etching On Gan
title_short Inductively Coupled Plasma Etching On Gan
title_full Inductively Coupled Plasma Etching On Gan
title_fullStr Inductively Coupled Plasma Etching On Gan
title_full_unstemmed Inductively Coupled Plasma Etching On Gan
title_sort inductively coupled plasma etching on gan
publishDate 2010
url http://eprints.usm.my/29516/1/Inductively_coupled_plasma_etching_on_GaN.pdf
http://eprints.usm.my/29516/
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score 13.211869