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Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.

Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.

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Bibliographic Details
Main Authors: Abdullah, A. Makarimi, Hutagalung, Sabar D., Lockman, Zainovia
Format: Conference or Workshop Item
Language:English
Published: 2010
Subjects:
TN1-997 Mining engineering. Metallurgy
Online Access:http://eprints.usm.my/19500/1/International_Conference_on_Nanotechnology.pdf
http://eprints.usm.my/19500/
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id my.usm.eprints.19500
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spelling my.usm.eprints.19500 http://eprints.usm.my/19500/ Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. Abdullah, A. Makarimi Hutagalung, Sabar D. Lockman, Zainovia TN1-997 Mining engineering. Metallurgy Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns. 2010-08 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/19500/1/International_Conference_on_Nanotechnology.pdf Abdullah, A. Makarimi and Hutagalung, Sabar D. and Lockman, Zainovia (2010) Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography. In: Proceedings of the International Conference on Nanotechnology: Fundamentals and Applications , 4-6 August 2010, Ottawa, Ontario, Canada.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic TN1-997 Mining engineering. Metallurgy
spellingShingle TN1-997 Mining engineering. Metallurgy
Abdullah, A. Makarimi
Hutagalung, Sabar D.
Lockman, Zainovia
Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
description Anisotropic etching of silicon has been widely used in fabrication of MEMS devices for many years. In this work, TMAH and KOH with IPA are used to etch silicon nanowire transistor patterns.
format Conference or Workshop Item
author Abdullah, A. Makarimi
Hutagalung, Sabar D.
Lockman, Zainovia
author_facet Abdullah, A. Makarimi
Hutagalung, Sabar D.
Lockman, Zainovia
author_sort Abdullah, A. Makarimi
title Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
title_short Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
title_full Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
title_fullStr Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
title_full_unstemmed Etching Effect On The Formation Of Silicon Nanowire Transistor Patterned By AFM Lithography.
title_sort etching effect on the formation of silicon nanowire transistor patterned by afm lithography.
publishDate 2010
url http://eprints.usm.my/19500/1/International_Conference_on_Nanotechnology.pdf
http://eprints.usm.my/19500/
_version_ 1643704126578622464
score 13.15806

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