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Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.

High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).

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Bibliographic Details
Main Authors: L, S Chuah, Hassan, Z, Abu Hassan, H
Format: Conference or Workshop Item
Language:English
Published: 2007
Subjects:
QC1 Physics (General)
Online Access:http://eprints.usm.my/14830/1/paper6.pdf
http://eprints.usm.my/14830/
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id my.usm.eprints.14830
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spelling my.usm.eprints.14830 http://eprints.usm.my/14830/ Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. L, S Chuah Hassan, Z Abu Hassan, H QC1 Physics (General) High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE). 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14830/1/paper6.pdf L, S Chuah and Hassan, Z and Abu Hassan, H (2007) Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
L, S Chuah
Hassan, Z
Abu Hassan, H
Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
description High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).
format Conference or Workshop Item
author L, S Chuah
Hassan, Z
Abu Hassan, H
author_facet L, S Chuah
Hassan, Z
Abu Hassan, H
author_sort L, S Chuah
title Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
title_short Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
title_full Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
title_fullStr Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
title_full_unstemmed Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
title_sort red emission of thin film electroluminescent device based on p-gan.
publishDate 2007
url http://eprints.usm.my/14830/1/paper6.pdf
http://eprints.usm.my/14830/
_version_ 1643702777666338816
score 13.209306

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