Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).
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Main Authors: | , , |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2007
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Subjects: | |
Online Access: | http://eprints.usm.my/14830/1/paper6.pdf http://eprints.usm.my/14830/ |
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