Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2007
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/14830/1/paper6.pdf http://eprints.usm.my/14830/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|