A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.

• Main Authors: Y, C.Lee, Z., Hassan, F., K. Yam, Abdullah, M. J., Ibrahim, K.
• Format: Monograph
• Published: Universiti Sains Malaysia 2000
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/10768/

High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well a...