A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well a...
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Universiti Sains Malaysia
2000
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my.usm.eprints.10768 http://eprints.usm.my/10768/ A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. QC1-999 Physics High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon. Universiti Sains Malaysia 2000 Monograph NonPeerReviewed Y, C.Lee and Z., Hassan and F., K. Yam and Abdullah, M. J. and Ibrahim, K. (2000) A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. Working Paper. Universiti Sains Malaysia . |
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QC1-999 Physics Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. |
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High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.
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format |
Monograph |
author |
Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. |
author_facet |
Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. |
author_sort |
Y, C.Lee |
title |
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
title_short |
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
title_full |
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
title_fullStr |
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
title_full_unstemmed |
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
|
title_sort |
comparative study of the electrical characteristics of metal-semiconductor-metal (msm) photodiodes based on gan grown on silicon. |
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Universiti Sains Malaysia |
publishDate |
2000 |
url |
http://eprints.usm.my/10768/ |
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1643701620444233728 |
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13.211869 |