Circuit level modeling of electrically doped adenine–thymine nanotube based field effect transistor
We investigate the gate-controlled, electrically doped tunnelling current in Adenine-Thymine heterojunction nanotube-based Field Effect Transistor (FET). This analytical model FET is designed by Density Functional Theory (DFT) and Non-Equilibrium Green's Function (NEGF) based First principle fo...
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Main Authors: | , , , , |
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格式: | Article |
语言: | English |
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Institute of Electrical and Electronics Engineers
2020
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在线阅读: | http://psasir.upm.edu.my/id/eprint/88164/1/ABSTRACT.pdf http://psasir.upm.edu.my/id/eprint/88164/ https://ieeexplore.ieee.org/document/8946542 |
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