Circuit level modeling of electrically doped adenine–thymine nanotube based field effect transistor

We investigate the gate-controlled, electrically doped tunnelling current in Adenine-Thymine heterojunction nanotube-based Field Effect Transistor (FET). This analytical model FET is designed by Density Functional Theory (DFT) and Non-Equilibrium Green's Function (NEGF) based First principle fo...

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Bibliographic Details
Main Authors: Dey, Debarati, De, Debashis, Ghaemi, Ferial, Ahmadian, Ali, Abdullah, Luqman Chuah
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers 2020
Online Access:http://psasir.upm.edu.my/id/eprint/88164/1/ABSTRACT.pdf
http://psasir.upm.edu.my/id/eprint/88164/
https://ieeexplore.ieee.org/document/8946542
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