Circuit level modeling of electrically doped adenine–thymine nanotube based field effect transistor

• المؤلفون الرئيسيون: Dey, Debarati, De, Debashis, Ghaemi, Ferial, Ahmadian, Ali, Abdullah, Luqman Chuah
• التنسيق: مقال
• اللغة: English
• منشور في: Institute of Electrical and Electronics Engineers 2020
• الوصول للمادة أونلاين: http://psasir.upm.edu.my/id/eprint/88164/1/ABSTRACT.pdf; http://psasir.upm.edu.my/id/eprint/88164/; https://ieeexplore.ieee.org/document/8946542

We investigate the gate-controlled, electrically doped tunnelling current in Adenine-Thymine heterojunction nanotube-based Field Effect Transistor (FET). This analytical model FET is designed by Density Functional Theory (DFT) and Non-Equilibrium Green's Function (NEGF) based First principle fo...