Pinch-off effect in p-type double gate and single gate junctionless silicon nanowire transistor fabricated by atomic force microscopy nanolithography

• Main Authors: Larki, Farhad, Dehzangi, Arash, Hassan, Jumiah, Abedini, Alam, Saion, Elias, Hutagalung, Sabar D., Abdullah, A. Makarimi, Hamidon, Mohd. Nizar
• Format: Article
• Language: English
• Published: Trans Tech Publications 2013
• Online Access: http://psasir.upm.edu.my/id/eprint/30403/1/Pinch.pdf; http://psasir.upm.edu.my/id/eprint/30403/

The spark of aggressive scaling of transistors was started after the Moors law on prediction of device dimensions. Recently, among the several types of transistors, junctionless transistors were considered as one of the promising alternative for new generation of nanotransistors. In this work, we in...