Reaction method control of impurity scattering in C-doped MgB2: proving the role of defects besides C substitution level

• Main Authors: Chen, Soo Kien, Tan, Kwee Yong, Shaari, Abdul Halim, Xu, Xun, De Silva, Kaludewa Sujeewa Buddhimali, Yeoh, Wai Kong, Dou, Shi Xue, Kursumovic, Ahmed, MacManus-Driscoll, Judith L.
• Format: Article
• Language: English
• Published: IOP Publishing 2013
• Online Access: http://psasir.upm.edu.my/id/eprint/30259/1/Reaction%20method%20control%20of%20impurity%20scattering%20in%20C.pdf; http://psasir.upm.edu.my/id/eprint/30259/

In this study, Si and C were incorporated into polycrystalline MgB 2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40 K, ρA(40 K), is higher...