Nonlinear optical processes in optically trapped InP nanowires

We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trappi...

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Bibliographic Details
Main Authors: Wang, Fan, Reece, Peter J., Paiman, Suriati, Gao, Qiang, Tan, Hark Hoe, Jagadish, Chennupati
Format: Article
Language:English
Published: American Chemical Society 2011
Online Access:http://psasir.upm.edu.my/id/eprint/25261/1/Nonlinear%20optical%20processes%20in%20optically%20trapped%20InP%20nanowires.pdf
http://psasir.upm.edu.my/id/eprint/25261/
http://pubs.acs.org/doi/abs/10.1021/nl2020262
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Summary:We report on the observation of nonlinear optical excitation and related photoluminescence from single InP semiconductor nanowires held in suspension using a gradient force optical tweezers. Photoexcitation of free carriers is achieved through absorption of infrared (1.17 eV) photons from the trapping source via a combination of two- and three-photon processes. This was confirmed by power-dependent photoluminescence measurements. Marked differences in spectral features are noted between nonlinear optical excitation and direct excitation and are related to band-filling effects. Direct observation of second harmonic generation in trapped InP nanowires confirms the presence of nonlinear optical processes.