Growth of InP nanowires on silicon using a thin buffer layer

• Main Authors: Fonseka, H. Aruni, Tan, Hark Hoe, Kang, Jung Hyun, Paiman, Suriati, Gao, Qian, Parkinson, Patrick, Jagadish, Chennupati
• Format: Conference or Workshop Item
• Language: English
• Published: IEEE 2012
• Online Access: http://psasir.upm.edu.my/id/eprint/39268/1/Growth%20of%20InP%20nanowires%20on%20silicon%20using%20a%20thin%20buffer%20layer.pdf; http://psasir.upm.edu.my/id/eprint/39268/

InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology...