The effects of C substitution and disorder on the field dependent critical current density in MgB2 with nano-SiC additions.

• Main Authors: Chen, Soo Kien, X, Xu, Kim, J H, Shi, Xue Dou, Driscoll, Judith
• Format: Article
• Language: English; English
• Published: Elsevier 2010
• Online Access: http://psasir.upm.edu.my/id/eprint/17130/1/The%20effects%20of%20C%20substitution%20and%20disorder%20on%20the%20field%20dependent%20critical%20current%20density%20in%20MgB2%20with%20nano.pdf; http://psasir.upm.edu.my/id/eprint/17130/; http://dx.doi.org/10.1016/j.physc.2010.05.076

In this work, nano sized SiC powders were mixed with Mg and B and reacted by either a one-step insitu or two-step method resulted in different level of C substitution. X-ray diffraction shows the presence of Mg2Si signifying that the reaction between SiC and Mg occurred leading to the release of C in samples reacted in one-step method. Moreover, the much reduced value of a-axis indicates C substitution took place. Resistivity measurements showed higher intragrain scattering owing to a higher density of defects and/or impurities. These samples also show higher Hirr and Hc2 at 20 K in comparison to samples with mainly unreacted SiC (hence lower C substitution). More importantly, their Jc’s are more insensitive to high magnetic field (>4 T) at 6 K. However, at 20 K the effect of C content on Jc(H) is less pronounced. Finally, the order of magnitude of Jc(H) at both 6 K and 20 K is rather dominated by pinning.