High-isolation and low-loss RF MEMS shunt switches
This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed wi...
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Applied Computational Electromagnetics Society
2010
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Online Access: | http://psasir.upm.edu.my/id/eprint/15009/1/High-isolation%20and%20low-loss%20RF%20MEMS%20shunt%20switches.pdf http://psasir.upm.edu.my/id/eprint/15009/ http://www.aces-society.org/search.php?vol=25&no=9&type=2 |
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my.upm.eprints.150092019-05-08T07:49:38Z http://psasir.upm.edu.my/id/eprint/15009/ High-isolation and low-loss RF MEMS shunt switches Jaafar, Haslina Sidek, Othman Miskam, Muhamad Azman Abdul Rahman, Muhammad Razi This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed with a meander beam support to lower the pull-in voltage. Fast simulations of complex structures based on a method-of-moment approach allow for optimal design of MEMS switch. The switch has a simulated pull-in voltage of 2.5 V and the RF performances of insertion loss and isolation are less than -0.2 dB and -50 dB at 12 GHz, respectively. Applied Computational Electromagnetics Society 2010 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/15009/1/High-isolation%20and%20low-loss%20RF%20MEMS%20shunt%20switches.pdf Jaafar, Haslina and Sidek, Othman and Miskam, Muhamad Azman and Abdul Rahman, Muhammad Razi (2010) High-isolation and low-loss RF MEMS shunt switches. Applied Computational Electromagnetics Society Journal, 25 (9). pp. 780-786. ISSN 1054-4887 http://www.aces-society.org/search.php?vol=25&no=9&type=2 |
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This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed with a meander beam support to lower the pull-in voltage. Fast simulations of complex structures based on a method-of-moment approach allow for optimal design of MEMS switch. The switch has a simulated pull-in voltage of 2.5 V and the RF performances of insertion loss and isolation are less than -0.2 dB and -50 dB at 12 GHz, respectively. |
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Article |
author |
Jaafar, Haslina Sidek, Othman Miskam, Muhamad Azman Abdul Rahman, Muhammad Razi |
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Jaafar, Haslina Sidek, Othman Miskam, Muhamad Azman Abdul Rahman, Muhammad Razi High-isolation and low-loss RF MEMS shunt switches |
author_facet |
Jaafar, Haslina Sidek, Othman Miskam, Muhamad Azman Abdul Rahman, Muhammad Razi |
author_sort |
Jaafar, Haslina |
title |
High-isolation and low-loss RF MEMS shunt switches |
title_short |
High-isolation and low-loss RF MEMS shunt switches |
title_full |
High-isolation and low-loss RF MEMS shunt switches |
title_fullStr |
High-isolation and low-loss RF MEMS shunt switches |
title_full_unstemmed |
High-isolation and low-loss RF MEMS shunt switches |
title_sort |
high-isolation and low-loss rf mems shunt switches |
publisher |
Applied Computational Electromagnetics Society |
publishDate |
2010 |
url |
http://psasir.upm.edu.my/id/eprint/15009/1/High-isolation%20and%20low-loss%20RF%20MEMS%20shunt%20switches.pdf http://psasir.upm.edu.my/id/eprint/15009/ http://www.aces-society.org/search.php?vol=25&no=9&type=2 |
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13.211869 |