High-isolation and low-loss RF MEMS shunt switches
This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed wi...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Applied Computational Electromagnetics Society
2010
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| Online Access: | http://psasir.upm.edu.my/id/eprint/15009/1/High-isolation%20and%20low-loss%20RF%20MEMS%20shunt%20switches.pdf http://psasir.upm.edu.my/id/eprint/15009/ http://www.aces-society.org/search.php?vol=25&no=9&type=2 |
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| Summary: | This paper presents the design and simulation of a radio frequency (RF) microelectromechanical system (MEMS) shunt switch using a three-dimensional RF simulator, Em3ds10 (2008 version) software for the frequency range of 1-40 GHz. The shunt capacitive switch is electrostatic actuated and designed with a meander beam support to lower the pull-in voltage. Fast simulations of complex structures based on a method-of-moment approach allow for optimal design of MEMS switch. The switch has a simulated pull-in voltage of 2.5 V and the RF performances of insertion loss and isolation are less than -0.2 dB and -50 dB at 12 GHz, respectively. |
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