Process optimization approach in fine pitch Cu wire bonding
With SiO2 dielectric under aluminum pads, a 60 m bond pad pitch with 52 um bond pad opening Cu wire bonding process was developed in PBGA Hip 7 PGE wafer technology. The critical factors (wire type, capillary, and bonding parameter) and critical responses (bonded ball diameter, bonded ball height, w...
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| Main Authors: | , , , |
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2018
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| Online Access: | http://dspace.uniten.edu.my/jspui/handle/123456789/8804 |
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