High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

• المؤلفون الرئيسيون: Marshall, A.R.J., Ker, P.J., Krysa, A., David, J.P.R., Tan, C.H.
• التنسيق: مقال
• اللغة: en_US
• منشور في: 2017

High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence...