High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence...
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my.uniten.dspace-59912018-02-07T08:20:54Z High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit Marshall, A.R.J. Ker, P.J. Krysa, A. David, J.P.R. Tan, C.H. High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs. © 2011 Optical Society of America. 2017-12-08T07:48:17Z 2017-12-08T07:48:17Z 2011 Article 10.1364/OE.19.023341 en_US High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit. Optics Express, 19(23), 23341-23349 |
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High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to reduce with increasing avalanche gain. Hence these InAs e-APDs demonstrate a characteristic of theoretically ideal electron only APDs, the absence of a gain-bandwidth product limit. This is important because gain-bandwidth products restrict the maximum exploitable gain in all conventional high bandwidth APDs. Non-limiting gain-bandwidth products up to 580 GHz have been measured on these first high bandwidth e-APDs. © 2011 Optical Society of America. |
| format |
Article |
| author |
Marshall, A.R.J. Ker, P.J. Krysa, A. David, J.P.R. Tan, C.H. |
| spellingShingle |
Marshall, A.R.J. Ker, P.J. Krysa, A. David, J.P.R. Tan, C.H. High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit |
| author_facet |
Marshall, A.R.J. Ker, P.J. Krysa, A. David, J.P.R. Tan, C.H. |
| author_sort |
Marshall, A.R.J. |
| title |
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit |
| title_short |
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit |
| title_full |
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit |
| title_fullStr |
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit |
| title_full_unstemmed |
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit |
| title_sort |
high speed inas electron avalanche photodiodes overcome the conventional gain-bandwidth product limit |
| publishDate |
2017 |
| _version_ |
1644493817052659712 |
| score |
13.250246 |