Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes

Measurement and analysis of the temperature dependence of avalanche gain and excess noise in InAs electron avalanche photodiodes (eAPDs) at 77 to 250 K are reported. The avalanche gain, initiated by pure electron injection, was found to reduce with decreasing temperature. However no significant chan...

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Bibliographic Details
Main Authors: Ker, P.J., David, J.P.R., Tan, C.H.
Format: Article
Language:en_US
Published: 2017
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