Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device

This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good impr...

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Bibliographic Details
Main Authors: Atan, N.B., Ahmad, I.B., Majlis, B.B.Y.
Format: Conference Paper
Language:English
Published: 2017
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