Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device

This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good impr...

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Bibliographic Details
Main Authors: Atan N.B., Ahmad I.B., Majlis B.B.Y.
Other Authors: 26422792900
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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