Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method

• Main Authors: Maheran, A.H.A., Menon, P.S., Shaari, S., Ahmad, I., Faizah, Z.A.N.
• 出版: 2017
• 在线阅读: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5196

This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using Taguchi's Signal-to-noise ratio (SNR) of nominal-the-best (NTB), the compensation implantation has been as identified as the dominant factor influencing the Vth value with 67.77% while the Halo implantation tilting angle has been identified as the adjustment factor. Upon optimization, the Vth value is-0.29538 V which is within the requirements of the International Technology Roadmap for Semiconductors (ITRS) 2012 which is-0.289 V ± 12.7 %. © 2015 IEEE.