Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

• المؤلفون الرئيسيون: Atan, N., Ahmad, I., Majlis, B.Y., Azle, M.F.
• اللغة: English
• منشور في: EDP Sciences 2017
• الموضوعات: Gate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods
• الوصول للمادة أونلاين: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5183

Manufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in...