Process characterization of 32nm semi analytical bilayer graphene-based mosfet
Volume :78, Issue No :-, Article ID :20167801016, Page Start :1, Page End :7, ISSN :-
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | en_US |
| Published: |
2017
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| id |
my.uniten.dspace-49 |
|---|---|
| record_format |
dspace |
| spelling |
my.uniten.dspace-492018-02-07T02:09:58Z Process characterization of 32nm semi analytical bilayer graphene-based mosfet Ibrahim bin Ahmad, Prof. Dr Ker Pin Jern, Mr. Noor Faizah Zainal Abidin P. Susthitha Menon N V Visvanathan Volume :78, Issue No :-, Article ID :20167801016, Page Start :1, Page End :7, ISSN :- This paper presents an inclusive study and analysis of graphene-based MOSFET device at 32nm gate length. The analysis was based on top-gated structure which utilized Hafnium Dioxide (HfO2) dielectrics and metal gate. The same conventional process flows of a transistor were applied except the deposition of bilayer graphene as a channel. The analytical expression of the channel potential includes all relevant physics of bilayer graphene and by assuming that this device displays an ideal ohmic contact and functioned at a ballistic transport. Based on the designed transistor, the on-state current (ION) for both GNMOS and GPMOS shows a promising performance where the value is 982.857uA/um and 99.501uA/um respectively. The devices also possess a very small leakage current (IOFF) of 0.289578nA/um for GNMOS and 0.130034nA/um for GPMOS as compared to the conventional SiO2/Poly-Si and high-k metal gate transistors. However, the devices suffer an inappropriate subthreshold swing (SS) and high value of drain induced barrier lowering (DIBL). 2017-05-11T07:00:27Z 2017-05-11T07:00:27Z 2016-10 Article 10.1051/matecconf/20167801016 en_US Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET. MATEC Web of Conferences, 78, [01016 |
| institution |
Universiti Tenaga Nasional |
| building |
UNITEN Library |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Tenaga Nasional |
| content_source |
UNITEN Institutional Repository |
| url_provider |
http://dspace.uniten.edu.my/ |
| language |
en_US |
| description |
Volume :78, Issue No :-, Article ID :20167801016, Page Start :1, Page End :7, ISSN :- |
| format |
Article |
| author |
Ibrahim bin Ahmad, Prof. Dr Ker Pin Jern, Mr. Noor Faizah Zainal Abidin P. Susthitha Menon N V Visvanathan |
| spellingShingle |
Ibrahim bin Ahmad, Prof. Dr Ker Pin Jern, Mr. Noor Faizah Zainal Abidin P. Susthitha Menon N V Visvanathan Process characterization of 32nm semi analytical bilayer graphene-based mosfet |
| author_facet |
Ibrahim bin Ahmad, Prof. Dr Ker Pin Jern, Mr. Noor Faizah Zainal Abidin P. Susthitha Menon N V Visvanathan |
| author_sort |
Ibrahim bin Ahmad, Prof. Dr |
| title |
Process characterization of 32nm semi analytical bilayer graphene-based mosfet |
| title_short |
Process characterization of 32nm semi analytical bilayer graphene-based mosfet |
| title_full |
Process characterization of 32nm semi analytical bilayer graphene-based mosfet |
| title_fullStr |
Process characterization of 32nm semi analytical bilayer graphene-based mosfet |
| title_full_unstemmed |
Process characterization of 32nm semi analytical bilayer graphene-based mosfet |
| title_sort |
process characterization of 32nm semi analytical bilayer graphene-based mosfet |
| publishDate |
2017 |
| _version_ |
1644492143828402176 |
| score |
13.160551 |