Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration

The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed...

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Main Authors: Nisham Rosly H., Doroody C., Harif M.N., Mohamad I.S., Isah M., Amin N.
Other Authors: 36873451800
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Published: MDPI 2024
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spelling my.uniten.dspace-341742024-10-14T11:18:17Z Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration Nisham Rosly H. Doroody C. Harif M.N. Mohamad I.S. Isah M. Amin N. 36873451800 56905467200 22634024000 55898400600 57219626175 7102424614 cadmium selenide chloride treatment energy indium chloride magnetron sputtering solar cells thin film Cadmium chloride Carrier concentration Chlorine compounds Crystallinity Crystallite size Energy gap Grain boundaries II-VI semiconductors Selenium compounds Thin film solar cells CdSe thin films Chloride treatment Comparative analyzes Cristallinity Energy Magnetron-sputtering Molarity Optoelectrical Optoelectrical properties Thin-films Thin films The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 � 10?3 to 4.0 � 10?3, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl3-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl3, but the resistivity remained in the order of 103 ohm/cm2, suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl3 showed promising characteristics as well as the viability of treatment with 0.10 M InCl3 as an alternative to standard CdCl2 treatment. � 2023 by the authors. Final 2024-10-14T03:18:17Z 2024-10-14T03:18:17Z 2023 Article 10.3390/ma16114108 2-s2.0-85161579995 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85161579995&doi=10.3390%2fma16114108&partnerID=40&md5=1bf7967fd7a0d92de2022e80cd67aeac https://irepository.uniten.edu.my/handle/123456789/34174 16 11 4108 All Open Access Gold Open Access MDPI Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic cadmium selenide
chloride treatment
energy
indium chloride
magnetron sputtering
solar cells
thin film
Cadmium chloride
Carrier concentration
Chlorine compounds
Crystallinity
Crystallite size
Energy gap
Grain boundaries
II-VI semiconductors
Selenium compounds
Thin film solar cells
CdSe thin films
Chloride treatment
Comparative analyzes
Cristallinity
Energy
Magnetron-sputtering
Molarity
Optoelectrical
Optoelectrical properties
Thin-films
Thin films
spellingShingle cadmium selenide
chloride treatment
energy
indium chloride
magnetron sputtering
solar cells
thin film
Cadmium chloride
Carrier concentration
Chlorine compounds
Crystallinity
Crystallite size
Energy gap
Grain boundaries
II-VI semiconductors
Selenium compounds
Thin film solar cells
CdSe thin films
Chloride treatment
Comparative analyzes
Cristallinity
Energy
Magnetron-sputtering
Molarity
Optoelectrical
Optoelectrical properties
Thin-films
Thin films
Nisham Rosly H.
Doroody C.
Harif M.N.
Mohamad I.S.
Isah M.
Amin N.
Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration
description The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl3), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 � 10?3 to 4.0 � 10?3, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl3-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl3, but the resistivity remained in the order of 103 ohm/cm2, suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl3 showed promising characteristics as well as the viability of treatment with 0.10 M InCl3 as an alternative to standard CdCl2 treatment. � 2023 by the authors.
author2 36873451800
author_facet 36873451800
Nisham Rosly H.
Doroody C.
Harif M.N.
Mohamad I.S.
Isah M.
Amin N.
format Article
author Nisham Rosly H.
Doroody C.
Harif M.N.
Mohamad I.S.
Isah M.
Amin N.
author_sort Nisham Rosly H.
title Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration
title_short Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration
title_full Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration
title_fullStr Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration
title_full_unstemmed Optoelectrical Properties of Treated CdSe Thin Films with Variations in Indium Chloride Concentration
title_sort optoelectrical properties of treated cdse thin films with variations in indium chloride concentration
publisher MDPI
publishDate 2024
_version_ 1814061107792314368
score 13.222552