High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process

• Main Authors: Kim H., Liu Y., Lu K., Chang C.S., Sung D., Akl M., Qiao K., Kim K.S., Park B.-I., Zhu M., Suh J.M., Kim J., Jeong J., Baek Y., Ji Y.J., Kang S., Lee S., Han N.M., Kim C., Choi C., Zhang X., Choi H.-K., Zhang Y., Wang H., Kong L., Afeefah N.N., Ansari M.N.M., Park J., Lee K., Yeom G.Y., Kim S., Hwang J., Kong J., Bae S.-H., Shi Y., Hong S., Kong W.
• Other Authors: 23395055200
• Format: Article
• Published: Nature Research 2024
• Subjects: Cost reduction; Epilayers; Etching; Membranes; Semiconductor devices; Substrates; Free standing membranes; High-throughput; Integrated device; Layer transfer; Layer transfer process; Material-based; Reduce costs; Semiconductor device fabrication; Single wafer; Transfer technique; Article; crystal structure; degradation; desorption; epitaxy; high throughput analysis; layer transfer process; molecular dynamics; physical phenomena; surface property; Silicon wafers

Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current la...