High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process
Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current la...
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my.uniten.dspace-341662024-10-14T11:18:14Z High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process Kim H. Liu Y. Lu K. Chang C.S. Sung D. Akl M. Qiao K. Kim K.S. Park B.-I. Zhu M. Suh J.M. Kim J. Jeong J. Baek Y. Ji Y.J. Kang S. Lee S. Han N.M. Kim C. Choi C. Zhang X. Choi H.-K. Zhang Y. Wang H. Kong L. Afeefah N.N. Ansari M.N.M. Park J. Lee K. Yeom G.Y. Kim S. Hwang J. Kong J. Bae S.-H. Shi Y. Hong S. Kong W. Kim J. 23395055200 57223933800 57215155391 57201572676 15752342900 57222087214 57193994412 57155413700 56374342000 57205879973 57189456664 57193218380 56997982600 57211348747 57194324147 57218623519 55902692000 57191366234 55697725000 57222474397 57654034900 57223322810 57210741850 48161860600 57211194289 57221976593 55489853600 58545849100 55974683400 7005694639 57221945294 24070804300 26643411400 36902640200 55332700300 7405763882 57193994298 35179593300 Cost reduction Epilayers Etching Membranes Semiconductor devices Substrates Free standing membranes High-throughput Integrated device Layer transfer Layer transfer process Material-based Reduce costs Semiconductor device fabrication Single wafer Transfer technique Article crystal structure degradation desorption epitaxy high throughput analysis layer transfer process molecular dynamics physical phenomena surface property Silicon wafers Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III�N and III�V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost. � 2023, The Author(s), under exclusive licence to Springer Nature Limited. Final 2024-10-14T03:18:14Z 2024-10-14T03:18:14Z 2023 Article 10.1038/s41565-023-01340-3 2-s2.0-85150392697 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85150392697&doi=10.1038%2fs41565-023-01340-3&partnerID=40&md5=b09bd3cd35080dfef1b34dd2493f11fd https://irepository.uniten.edu.my/handle/123456789/34166 18 5 464 470 Nature Research Scopus |
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Cost reduction Epilayers Etching Membranes Semiconductor devices Substrates Free standing membranes High-throughput Integrated device Layer transfer Layer transfer process Material-based Reduce costs Semiconductor device fabrication Single wafer Transfer technique Article crystal structure degradation desorption epitaxy high throughput analysis layer transfer process molecular dynamics physical phenomena surface property Silicon wafers |
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Cost reduction Epilayers Etching Membranes Semiconductor devices Substrates Free standing membranes High-throughput Integrated device Layer transfer Layer transfer process Material-based Reduce costs Semiconductor device fabrication Single wafer Transfer technique Article crystal structure degradation desorption epitaxy high throughput analysis layer transfer process molecular dynamics physical phenomena surface property Silicon wafers Kim H. Liu Y. Lu K. Chang C.S. Sung D. Akl M. Qiao K. Kim K.S. Park B.-I. Zhu M. Suh J.M. Kim J. Jeong J. Baek Y. Ji Y.J. Kang S. Lee S. Han N.M. Kim C. Choi C. Zhang X. Choi H.-K. Zhang Y. Wang H. Kong L. Afeefah N.N. Ansari M.N.M. Park J. Lee K. Yeom G.Y. Kim S. Hwang J. Kong J. Bae S.-H. Shi Y. Hong S. Kong W. Kim J. High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process |
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Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III�N and III�V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost. � 2023, The Author(s), under exclusive licence to Springer Nature Limited. |
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23395055200 |
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23395055200 Kim H. Liu Y. Lu K. Chang C.S. Sung D. Akl M. Qiao K. Kim K.S. Park B.-I. Zhu M. Suh J.M. Kim J. Jeong J. Baek Y. Ji Y.J. Kang S. Lee S. Han N.M. Kim C. Choi C. Zhang X. Choi H.-K. Zhang Y. Wang H. Kong L. Afeefah N.N. Ansari M.N.M. Park J. Lee K. Yeom G.Y. Kim S. Hwang J. Kong J. Bae S.-H. Shi Y. Hong S. Kong W. Kim J. |
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Article |
author |
Kim H. Liu Y. Lu K. Chang C.S. Sung D. Akl M. Qiao K. Kim K.S. Park B.-I. Zhu M. Suh J.M. Kim J. Jeong J. Baek Y. Ji Y.J. Kang S. Lee S. Han N.M. Kim C. Choi C. Zhang X. Choi H.-K. Zhang Y. Wang H. Kong L. Afeefah N.N. Ansari M.N.M. Park J. Lee K. Yeom G.Y. Kim S. Hwang J. Kong J. Bae S.-H. Shi Y. Hong S. Kong W. Kim J. |
author_sort |
Kim H. |
title |
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process |
title_short |
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process |
title_full |
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process |
title_fullStr |
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process |
title_full_unstemmed |
High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process |
title_sort |
high-throughput manufacturing of epitaxial membranes from a single wafer by 2d materials-based layer transfer process |
publisher |
Nature Research |
publishDate |
2024 |
_version_ |
1814061044424769536 |
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13.209306 |