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Space-Charge-Limited Dark Injection (SCL DI) transient measurements

It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection...

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Bibliographic Details
Main Authors: Yap B.K., Koh S.P., Tiong S.K., Ong C.N.
Other Authors: 26649255900
Format: Conference paper
Published: 2023
Subjects:
Semiconductor materials
Transient analysis
Bulk materials
Charge-carrier mobility
Dark injection
Injection efficiency
Mobility value
Nano scale
Space-charge-limited
Thin layers
Time-of-flight photocurrents
Transient measurement
Carrier mobility
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Summary:It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. � 2010 IEEE.

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