Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well
Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The objective of this paper is to optimize the process parameters for a SOI-based lateral PIN...
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National Institute of Optoelectronics
2023
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