Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

• Main Authors: Menon P.S., Tasirin S.K., Ahmad I., Islam S., Abdullah S.F.
• Other Authors: 57201289731
• Format: Article
• Published: National Institute of Optoelectronics 2023
• Subjects: ATHENA; ATLAS; Photodetector device; Taguchi method; Bias voltage; Frequency response; Multilayers; Optical fiber communication; Optical fiber fabrication; Optical fibers; Photodiodes; Si-Ge alloys; Silicon on insulator technology; Taguchi methods; Electrical characterization; Fabrication parameters; Fabrication simulation; Lateral PIN photodiodes; Silicon-on- insulators (SOI); Taguchi optimization method; Semiconductor quantum wells

Silicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The objective of this paper is to optimize the process parameters for a SOI-based lateral PIN...