High performance silicon lateral PIN photodiode

• Main Authors: Tasirin S.K., Menon P.S., Ahmad I., Abdullah S.F.
• Other Authors: 55602329100
• Format: Conference paper
• Published: Institute of Physics Publishing 2023
• Subjects: Data communication systems; Frequency response; Design parameters; High-speed optoelectronics; Lateral p-i-n photodiode; Lateral PIN photodiodes; Layer thickness; Optical power; Photoabsorptions; Wavelength ranges; communication network; conference proceeding; data set; design; fiber optics; quantum mechanics; silicon; Photodiodes

Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. � Published under licence by IOP Publishing Ltd.