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High performance silicon lateral PIN photodiode

Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range w...

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Bibliographic Details
Main Authors: Tasirin S.K., Menon P.S., Ahmad I., Abdullah S.F.
Other Authors: 55602329100
Format: Conference paper
Published: Institute of Physics Publishing 2023
Subjects:
Data communication systems
Frequency response
Design parameters
High-speed optoelectronics
Lateral p-i-n photodiode
Lateral PIN photodiodes
Layer thickness
Optical power
Photoabsorptions
Wavelength ranges
communication network
conference proceeding
data set
design
fiber optics
quantum mechanics
silicon
Photodiodes
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Summary:Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. � Published under licence by IOP Publishing Ltd.

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