Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices

• Main Authors: Farooq S.F.S., Hamid F.A.
• Other Authors: 24463565400
• Format: Conference paper
• Published: 2023
• Subjects: COMFET; Linear composite MOSFET; Linear transconductor; Small signal; Submicron transconductor; Decision making; Field effect transistors; Filtration; Linearization; Photoacoustic effect; Planning; Resource allocation; Students; Transconductance; Continuous-time (CT); Feasibility studies; field effects; I V characteristics; Long channel devices; Research and development; Second order effects; Small signals; Sub micron devices; Submicron length; Transconductors; Research and development management

A linear transconductor is highly desirable in many applications such as continuous time filtering and ADC. In long channel devices where the I-V characteristic of the transistor follows the square law, COMFET circuit achieves linearity without the need to invoke small signal. This paper studies the feasibility of implementing COMFET at submicron length where transistor do not follow square law and a variety of second order effects degrade the linearity of COMFET. The simulated THD at 1 kHz of COMFET and other transconductors are compared.