Cover Image

Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices

A linear transconductor is highly desirable in many applications such as continuous time filtering and ADC. In long channel devices where the I-V characteristic of the transistor follows the square law, COMFET circuit achieves linearity without the need to invoke small signal. This paper studies the...

Full description

Saved in:
Bibliographic Details
Main Authors: Farooq S.F.S., Hamid F.A.
Other Authors: 24463565400
Format: Conference paper
Published: 2023
Subjects:
COMFET
Linear composite MOSFET
Linear transconductor
Small signal
Submicron transconductor
Decision making
Field effect transistors
Filtration
Linearization
Photoacoustic effect
Planning
Resource allocation
Students
Transconductance
Continuous-time (CT)
Feasibility studies
field effects
I V characteristics
Long channel devices
Research and development
Second order effects
Small signals
Sub micron devices
Submicron length
Transconductors
Research and development management
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A linear transconductor is highly desirable in many applications such as continuous time filtering and ADC. In long channel devices where the I-V characteristic of the transistor follows the square law, COMFET circuit achieves linearity without the need to invoke small signal. This paper studies the feasibility of implementing COMFET at submicron length where transistor do not follow square law and a variety of second order effects degrade the linearity of COMFET. The simulated THD at 1 kHz of COMFET and other transconductors are compared.

Similar Items